Changes in the optical performances of blue light-emitting diodes based on InGaN/AlGaN/GaN heterostructures were studied after ageing stages consisting of electrical stress at a dc forward current of 100 mA and high-energy electron-beam irradiation. The structural modifications induced by ageing were investigated and a physical description of the nature of the damage was defined by means of complementary techniques such as electroluminescence, cathodoluminescence and current–voltage characterization at different temperatures. The onset of a broad optical band at about 3.08 eV and a consistent reduction of the quantum well optical efficiency revealed a substantial degradation of the heterostructure after ageing. The new band, ascribed to the formation of Mg-related complexes acting as shallow acceptors, occurred together with a dramatic change in the current–voltage curves. Its quenching after electron-beam irradiation and its recurrence after further electrical stress suggested the metastable nature of Mg-related complexes.

Effects of extreme DC-aging and electron-beam irradiation in InGaN/AlGaN/GaN light emitting diodes / Pavesi, Maura; F., Rossi; E., Zanoni. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 21:(2006), pp. 138-143. [10.1088/0268-1242/21/2/006]

Effects of extreme DC-aging and electron-beam irradiation in InGaN/AlGaN/GaN light emitting diodes

PAVESI, Maura;
2006-01-01

Abstract

Changes in the optical performances of blue light-emitting diodes based on InGaN/AlGaN/GaN heterostructures were studied after ageing stages consisting of electrical stress at a dc forward current of 100 mA and high-energy electron-beam irradiation. The structural modifications induced by ageing were investigated and a physical description of the nature of the damage was defined by means of complementary techniques such as electroluminescence, cathodoluminescence and current–voltage characterization at different temperatures. The onset of a broad optical band at about 3.08 eV and a consistent reduction of the quantum well optical efficiency revealed a substantial degradation of the heterostructure after ageing. The new band, ascribed to the formation of Mg-related complexes acting as shallow acceptors, occurred together with a dramatic change in the current–voltage curves. Its quenching after electron-beam irradiation and its recurrence after further electrical stress suggested the metastable nature of Mg-related complexes.
2006
Effects of extreme DC-aging and electron-beam irradiation in InGaN/AlGaN/GaN light emitting diodes / Pavesi, Maura; F., Rossi; E., Zanoni. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 21:(2006), pp. 138-143. [10.1088/0268-1242/21/2/006]
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/1498098
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 25
  • ???jsp.display-item.citation.isi??? 17
social impact