CdTe/CdS thin film solar cells have been grown by high-vacuum evaporation (HVE) and close-space sublimation. To understand the role of Cl on the microstructure and composition of the CdTe/CdS layers and interfaces, the cells were annealed for different durations after different amounts of CdCl2 had been deposited. Transmission electron microscopy shows a loss of orientational relationship between CdTe and US after annealing under the influence of Cl. The interdiffusion of S and Te across the interface is measured quantitatively and segregation of Cl, Te and O at the CdTe/CdS interface is detected by energy-dispersive X-ray mapping in the electron microscope. The results show a strong correlation with the diffusion of Cl along the CdTe grain boundaries, which is directly proved for the first time. It is suggested that recrystallization of CdTe grains starts from the CdTe surface and proceeds towards the interface. Cells grown by HVE show all the features expected from the predominance of recrystallization. (C) 2003 Elsevier Science B.V. All rights reserved.

Structural and chemical interface characterization of CdTe solar cells by transmission electron microscopy / Terheggen M; Heinrich H; Kostorz G; Romeo A; Baetzner D; Tiwari A N; Bosio A; Romeo N. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 431-432(2003), pp. 262-266. [10.1016/S0040-6090(03)00268-2]

Structural and chemical interface characterization of CdTe solar cells by transmission electron microscopy

BOSIO, Alessio;ROMEO, Nicola
2003

Abstract

CdTe/CdS thin film solar cells have been grown by high-vacuum evaporation (HVE) and close-space sublimation. To understand the role of Cl on the microstructure and composition of the CdTe/CdS layers and interfaces, the cells were annealed for different durations after different amounts of CdCl2 had been deposited. Transmission electron microscopy shows a loss of orientational relationship between CdTe and US after annealing under the influence of Cl. The interdiffusion of S and Te across the interface is measured quantitatively and segregation of Cl, Te and O at the CdTe/CdS interface is detected by energy-dispersive X-ray mapping in the electron microscope. The results show a strong correlation with the diffusion of Cl along the CdTe grain boundaries, which is directly proved for the first time. It is suggested that recrystallization of CdTe grains starts from the CdTe surface and proceeds towards the interface. Cells grown by HVE show all the features expected from the predominance of recrystallization. (C) 2003 Elsevier Science B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/1460359
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