In this paper, a completely dry process suitable to prepare stable and efficient CdS/CdTe thin film solar cells is described. In order to obtain high efficiency solar cells, the absorber layer, namely CdTe, needs to be treated at 400°C in presence of CdCl2. This process is generally done in air in which some oxides form on the CdTe surface. A back contact made directly on the oxidized surface cannot work well. For this reason and also to prepare a suitable CdTe surface, an etching in Br-methanol or in a mixture of acids is generally done. In our case we avoided the etching by treating CdTe with CdCl2 in pure Ar and by removing the residual CdCl2 with a slight annealing at 400°C in vacuum.
High efficiency CdTe/CdS thin film solar cells with Sb2Te3 back contact by a thoroughly dry process / Romeo, Nicola; Bosio, Alessio; Canevari, V.; Podesta', A.; Mazzamuto, Samantha; Guadalupi, G. M.. - CD-ROM. - 1:(2004), pp. 1718-1720. (Intervento presentato al convegno 19th European Photovoltaic Solar Energy Conference. tenutosi a Parigi nel 7-11 june).
High efficiency CdTe/CdS thin film solar cells with Sb2Te3 back contact by a thoroughly dry process
ROMEO, Nicola
Membro del Collaboration Group
;BOSIO, AlessioValidation
;MAZZAMUTO, SamanthaMembro del Collaboration Group
;
2004-01-01
Abstract
In this paper, a completely dry process suitable to prepare stable and efficient CdS/CdTe thin film solar cells is described. In order to obtain high efficiency solar cells, the absorber layer, namely CdTe, needs to be treated at 400°C in presence of CdCl2. This process is generally done in air in which some oxides form on the CdTe surface. A back contact made directly on the oxidized surface cannot work well. For this reason and also to prepare a suitable CdTe surface, an etching in Br-methanol or in a mixture of acids is generally done. In our case we avoided the etching by treating CdTe with CdCl2 in pure Ar and by removing the residual CdCl2 with a slight annealing at 400°C in vacuum.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.