MOVPE Growth of InP-based III-V compounds doped with transition metals (Fe,Mn)

The project of thesis has concerned the growth through phase epitassia vapor with metal-organic precursors (MOVPE) of semiconductors compounds III-V "InP-based" (InGaAsp/ InP o GaAs)and their structural optimization, electric and optics to the goals of the study of the effects of the introduction of metals of transition (Fe, Mn) obtained through ionic implantation after the growth or through doping during the same one. The first aspect is concerning the possibility of obtaining areas to high electrical resistivity for the electric insulation in integrated devices while the second is turned to the possibility of exploiting the magnetic properties induced in the semiconductor (Diluted magnetic semiconductors) by the incorporation of 3d metals.