In this work, the different aspects of X-ray digital radiology are considered and the requirements of the materials for radiation detector applications are identified. The status of development of X- and gamma/-ray detectors based on semi-insulating (SI) GaAs and InP is reviewed. Emphasis is put on the (i) basic material characteristics, (ii) role of the electrodes in the overall detector performances. Detectors recently developed at IEE SAS are illustrated along with the first digital images taken with the detectors. Some conclusions about the relationship between material quality and applications are provided.
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects / Dubecky, F.; Darmo, J.; Zat'Ko, B.; Fornari, R.; Necas, V.; Krempasky, M.; Pelfer, P. G.; Sekacova, M.; Bohacek, P.. - STAMPA. - 2000-:(2000), pp. 151-158. (Intervento presentato al convegno 11th International Semiconducting and Insulating Materials Conference, SIMC 2000 tenutosi a The Australian National University, aus nel 2000) [10.1109/SIM.2000.939217].
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects
Fornari R.;
2000-01-01
Abstract
In this work, the different aspects of X-ray digital radiology are considered and the requirements of the materials for radiation detector applications are identified. The status of development of X- and gamma/-ray detectors based on semi-insulating (SI) GaAs and InP is reviewed. Emphasis is put on the (i) basic material characteristics, (ii) role of the electrodes in the overall detector performances. Detectors recently developed at IEE SAS are illustrated along with the first digital images taken with the detectors. Some conclusions about the relationship between material quality and applications are provided.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
