We report on the room temperature, simple and cheap preparation by mechano-synthesis of polycrystalline targets of complex sulphide semiconductors, namely CuInS2 (CIS), to be used for film deposition in physical vacuum techniques such as PLD, sputtering or LT-PED. The sulphur (S)-based targets usually require expensive high pressure equipment to compensate the high S vapour pressure; nevertheless they are indispensable for the deposition of high band-gap semiconductor materials. The comparison of CIS films grown by mechano-synthesis and by commercial targets demonstrates similar material quality, making the mechano-synthesis a viable solution in the fabrication of high band-gap, S-based targets of complex chalcogenides.

An affordable method to produce CuInS2 'mechano-targets' for film deposition / Delmonte, D.; Manfredi, R.; Calestani, D.; Mezzadri, F.; Righi, L.; Mazzer, M.; Pattini, F.; Rampino, S.; Spaggiari, G.; Gilioli, E.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 35:4(2020), p. 045026. [10.1088/1361-6641/ab760e]

An affordable method to produce CuInS2 'mechano-targets' for film deposition

Delmonte D.;Manfredi R.;Mezzadri F.;Righi L.;Pattini F.;Spaggiari G.;
2020-01-01

Abstract

We report on the room temperature, simple and cheap preparation by mechano-synthesis of polycrystalline targets of complex sulphide semiconductors, namely CuInS2 (CIS), to be used for film deposition in physical vacuum techniques such as PLD, sputtering or LT-PED. The sulphur (S)-based targets usually require expensive high pressure equipment to compensate the high S vapour pressure; nevertheless they are indispensable for the deposition of high band-gap semiconductor materials. The comparison of CIS films grown by mechano-synthesis and by commercial targets demonstrates similar material quality, making the mechano-synthesis a viable solution in the fabrication of high band-gap, S-based targets of complex chalcogenides.
2020
An affordable method to produce CuInS2 'mechano-targets' for film deposition / Delmonte, D.; Manfredi, R.; Calestani, D.; Mezzadri, F.; Righi, L.; Mazzer, M.; Pattini, F.; Rampino, S.; Spaggiari, G.; Gilioli, E.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 35:4(2020), p. 045026. [10.1088/1361-6641/ab760e]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2880284
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