High quality epitaxial crystalline Cu(In,Ga)Se2 (CIGS) films were grown on n-type (1 0 0) - Germanium (Ge) substrates using pulsed electron deposition (PED) technique at a remarkably low substrate temperature of 300 °C, thanks to the high-energy of adatoms arriving to the substrate. The crystalline quality was confirmed by X-ray diffraction techniques and from Transmission Electron Microscopy and the only defects found were twin boundaries along the (1 1 2) direction in these CIGS films; surprisingly neither misfit dislocations nor Kinkerdall voids were observed. A 100 meV optical band located below the band edge was observed by Photoluminescence technique. Current-voltage and capacitance-voltage measurements confirm an intrinsic p-type conductivity of CIGS films, with a free carrier concentration of ≈3.5×1016 cm-3. These characteristics of crystalline CIGS films are crucial for a variety of potential applications, such as more efficient absorber layers in single-junction and as an integral component of multi-junction thin-film solar cells.
Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique / Rampino, S.; Bronzoni, M.; Colace, Lorenzo; Frigeri, P.; Gombia, E.; Maragliano, C.; Mezzadri, F.; Nasi, L.; Seravalli, L.; Pattini, F.; Trevisi, G.; Motapothula, M.; Venkatesan, T.; Gilioli, E.. - In: SOLAR ENERGY MATERIALS AND SOLAR CELLS. - ISSN 0927-0248. - 133:(2015), pp. 82-86. [10.1016/j.solmat.2014.10.048]
Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique
Rampino, S.
;Bronzoni, M.;COLACE, LORENZO;Mezzadri, F.;Nasi, L.;Pattini, F.;Trevisi, G.;
2015-01-01
Abstract
High quality epitaxial crystalline Cu(In,Ga)Se2 (CIGS) films were grown on n-type (1 0 0) - Germanium (Ge) substrates using pulsed electron deposition (PED) technique at a remarkably low substrate temperature of 300 °C, thanks to the high-energy of adatoms arriving to the substrate. The crystalline quality was confirmed by X-ray diffraction techniques and from Transmission Electron Microscopy and the only defects found were twin boundaries along the (1 1 2) direction in these CIGS films; surprisingly neither misfit dislocations nor Kinkerdall voids were observed. A 100 meV optical band located below the band edge was observed by Photoluminescence technique. Current-voltage and capacitance-voltage measurements confirm an intrinsic p-type conductivity of CIGS films, with a free carrier concentration of ≈3.5×1016 cm-3. These characteristics of crystalline CIGS films are crucial for a variety of potential applications, such as more efficient absorber layers in single-junction and as an integral component of multi-junction thin-film solar cells.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
