This paper presents the assembly and characterization of an integrated all silicon-carbide (SiC) 3-to-1 phases matrix converter, intended for harsh environment withstand capability and highly reliable operation (e.g., renewable energies, solid-state transformation, smart grids, electric transport). Commercial SiC MOSFETs in bare-die form are used to develop custom-packaged bi-directional switches, with an advanced approach aiming at the optimization of their electro-magnetic, electro-thermal and thermos-mechanical performance. Advanced cooling and packaging solutions at system level enable modularity with reduced impact of single component failure on the overall system, contributing to significantly reduced maintenance and repair costs.

Modular integrated SiC MOSFET matrix converter / Aliyu, Attahir M; Castellazzi, Alberto; Lasserre, Philippe; Delmonte, Nicola. - (2017), pp. 1184-1188. [10.1109/IFEEC.2017.7992209]

Modular integrated SiC MOSFET matrix converter

DELMONTE, Nicola
2017-01-01

Abstract

This paper presents the assembly and characterization of an integrated all silicon-carbide (SiC) 3-to-1 phases matrix converter, intended for harsh environment withstand capability and highly reliable operation (e.g., renewable energies, solid-state transformation, smart grids, electric transport). Commercial SiC MOSFETs in bare-die form are used to develop custom-packaged bi-directional switches, with an advanced approach aiming at the optimization of their electro-magnetic, electro-thermal and thermos-mechanical performance. Advanced cooling and packaging solutions at system level enable modularity with reduced impact of single component failure on the overall system, contributing to significantly reduced maintenance and repair costs.
2017
978-1-5090-5157-1
Modular integrated SiC MOSFET matrix converter / Aliyu, Attahir M; Castellazzi, Alberto; Lasserre, Philippe; Delmonte, Nicola. - (2017), pp. 1184-1188. [10.1109/IFEEC.2017.7992209]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2834935
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