A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are enabled by SiC MOSFETs for PV inverters without compromising on the efficiency of the system.
Performance analysis of UniTL-H6 inverter with SiC MOSFETs2014 / Barater, Davide; Giampaolo, Buticchi; Concari, Carlo; Franceschini, Giovanni; Emre, Gurpinar; Dipankar, De; Alberto, Castellazzi. - (2014), pp. 433-439. (Intervento presentato al convegno 2014 International Power Electronics Conference tenutosi a Hiroshima, Japan nel 18 May 2014 through 21 May 2014) [10.1109/IPEC.2014.6869619].
Performance analysis of UniTL-H6 inverter with SiC MOSFETs2014
BARATER, Davide;CONCARI, Carlo;FRANCESCHINI, Giovanni;
2014-01-01
Abstract
A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are enabled by SiC MOSFETs for PV inverters without compromising on the efficiency of the system.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
