InGaN/GaN heterostructures have been deposited by MOVPE onto (0 0 0 1) sapphire substrates. It has been noted that the Indium incorporation efficiency depends on different growth parameters, namely the growth rate, reaction kinetics and partial pressure of H, in the reaction cell. In this work the InGaN composition has been investigated by different techniques and the incorporation efficiency of indium is then correlated with substrate temperature, substrate rotation, H-2 partial pressure and input flows of TMG and TMI. (C) 2004 Elsevier B.V. All rights reserved.
A study of Indium incorporation efficiency in InGaN grown by MOVPE / M., Bosi; Fornari, Roberto. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - 265:(2004), pp. 434-439. [10.1016/j.jcry.2004.02.103]
A study of Indium incorporation efficiency in InGaN grown by MOVPE
FORNARI, Roberto
2004-01-01
Abstract
InGaN/GaN heterostructures have been deposited by MOVPE onto (0 0 0 1) sapphire substrates. It has been noted that the Indium incorporation efficiency depends on different growth parameters, namely the growth rate, reaction kinetics and partial pressure of H, in the reaction cell. In this work the InGaN composition has been investigated by different techniques and the incorporation efficiency of indium is then correlated with substrate temperature, substrate rotation, H-2 partial pressure and input flows of TMG and TMI. (C) 2004 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
