CuInSe2/CdS Thin Film Solar Cells with a conversion efficiency of 9% have been obtained by preparing the CuInSe2 film by selenization of Cu and In elemental layers in a Se-atmosphere at a substrate temperature of 400°C and by preparing the CdS window layer by sputtering. Cu and In elemental layers have been deposited both by sputtering and electron gun. A good sticking of the CuInSe2 film on the Mo-covered alumina or glass substrate has been obtained when the Cu and In elemental layers have been deposited one on top of each other at a substrate temperature dose to the In melting point.
CuInSe2/CdS Thin Film Solar Cells by Selenization and Sputtering / Romeo, Nicola; Bosio, Alessio; Mussini, P.. - STAMPA. - I:(1991), pp. 891-892. (Intervento presentato al convegno International Photovoltaic Solar Energy Conference tenutosi a Lisbon, Portugal nel 8-12 April, 1991).
CuInSe2/CdS Thin Film Solar Cells by Selenization and Sputtering
ROMEO, Nicola;BOSIO, Alessio;
1991-01-01
Abstract
CuInSe2/CdS Thin Film Solar Cells with a conversion efficiency of 9% have been obtained by preparing the CuInSe2 film by selenization of Cu and In elemental layers in a Se-atmosphere at a substrate temperature of 400°C and by preparing the CdS window layer by sputtering. Cu and In elemental layers have been deposited both by sputtering and electron gun. A good sticking of the CuInSe2 film on the Mo-covered alumina or glass substrate has been obtained when the Cu and In elemental layers have been deposited one on top of each other at a substrate temperature dose to the In melting point.| File | Dimensione | Formato | |
|---|---|---|---|
|
Proc-81.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
Creative commons
Dimensione
286.73 kB
Formato
Adobe PDF
|
286.73 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
