A New selenization process, suitable to grow stoichiometrically uniform CuInxGa1-xSe2 thin films over i inch2 area, is described. This process is based on the use of a precursor material, which at the selenizationtemperature (500 °C), contains much less liquid than the precursors so far studied.
"A multistage selenization process suitable to grow stoichiometrically uniform CuInXGa1-XSe2 thin films", / Romeo, Nicola; Bosio, Alessio; V., Canevari; Tedeschi, Riccardo Alfredo Arturo. - STAMPA. - II:(2001), pp. 1105-1106. (Intervento presentato al convegno 17th European Photovoltaic Solar Energy Conference tenutosi a Munich nel 22-26 October 2001).
"A multistage selenization process suitable to grow stoichiometrically uniform CuInXGa1-XSe2 thin films",
ROMEO, NicolaMembro del Collaboration Group
;BOSIO, Alessio
;TEDESCHI, Riccardo Alfredo ArturoMembro del Collaboration Group
2001-01-01
Abstract
A New selenization process, suitable to grow stoichiometrically uniform CuInxGa1-xSe2 thin films over i inch2 area, is described. This process is based on the use of a precursor material, which at the selenizationtemperature (500 °C), contains much less liquid than the precursors so far studied.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.