A New selenization process, suitable to grow stoichiometrically uniform CuInxGa1-xSe2 thin films over i inch2 area, is described. This process is based on the use of a precursor material, which at the selenizationtemperature (500 °C), contains much less liquid than the precursors so far studied.

"A multistage selenization process suitable to grow stoichiometrically uniform CuInXGa1-XSe2 thin films", / Romeo, Nicola; Bosio, Alessio; V., Canevari; Tedeschi, Riccardo Alfredo Arturo. - STAMPA. - II:(2001), pp. 1105-1106. (Intervento presentato al convegno 17th European Photovoltaic Solar Energy Conference tenutosi a Munich nel 22-26 October 2001).

"A multistage selenization process suitable to grow stoichiometrically uniform CuInXGa1-XSe2 thin films",

ROMEO, Nicola
Membro del Collaboration Group
;
BOSIO, Alessio
;
TEDESCHI, Riccardo Alfredo Arturo
Membro del Collaboration Group
2001-01-01

Abstract

A New selenization process, suitable to grow stoichiometrically uniform CuInxGa1-xSe2 thin films over i inch2 area, is described. This process is based on the use of a precursor material, which at the selenizationtemperature (500 °C), contains much less liquid than the precursors so far studied.
2001
3-936338-08-6
"A multistage selenization process suitable to grow stoichiometrically uniform CuInXGa1-XSe2 thin films", / Romeo, Nicola; Bosio, Alessio; V., Canevari; Tedeschi, Riccardo Alfredo Arturo. - STAMPA. - II:(2001), pp. 1105-1106. (Intervento presentato al convegno 17th European Photovoltaic Solar Energy Conference tenutosi a Munich nel 22-26 October 2001).
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2297769
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact