One of the main problems affecting the vertical Bridgman growth of CdZnTe crystals is the crystal–crucible contact. In this work, we show that it is possible to avoid this interaction by inserting a stable boron oxide liquid layer between the crucible and the melt. This layer improves the structural properties of the grown crystals, reducing the etch pit density to the 10^3 cm^−3 range. The possible origins for the formation of a stable boron oxide layer are discussed.
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman Technique / A., Zappettini; M., Zha; Pavesi, Maura; L., Zanotti. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - 307:2(2007), pp. 283-288. [10.1016/j.jcrysgro.2007.07.012]
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman Technique
PAVESI, Maura;
2007-01-01
Abstract
One of the main problems affecting the vertical Bridgman growth of CdZnTe crystals is the crystal–crucible contact. In this work, we show that it is possible to avoid this interaction by inserting a stable boron oxide liquid layer between the crucible and the melt. This layer improves the structural properties of the grown crystals, reducing the etch pit density to the 10^3 cm^−3 range. The possible origins for the formation of a stable boron oxide layer are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
