Sfoglia per Autore
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources
2005-01-01 Begotti, M.; Ghezzi, Carlo; Longo, M.; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices
2009-01-01 Longo, Massimo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; C., Bocchi; F., Germini; L., Lazzarini
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices
2009-01-01 Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Baldini, M.; Vantaggio, Salvatore; Gombia, E.
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices
2010-01-01 Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Vantaggio, Salvatore; M., Baldini; E., Gombia
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications
2011-01-01 M., Baldini; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; E., Gombia; A., Motta; A., Gasparotto
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects
2011-01-01 E., Gombia; Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; M., Baldini; Vantaggio, Salvatore
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy
2012-01-01 R., Jakomin; Parisini, Antonella; Tarricone, Luciano; M., Longo; B., Fraboni; Vantaggio, Salvatore
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts
2013-01-01 Nipoti, Roberta; A., Hallén; Parisini, Antonella; F., Moscatelli; Vantaggio, Salvatore
Electrical characterization of a buried GaSb p-n junction controlled by native defects
2014-01-01 Gorni, Marco; Parisini, Antonella; Gombia, Enos; Baldini, M; Vantaggio, Salvatore; Ghezzi, Carlo
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC
2015-01-01 Nipoti, R.; Parisini, Antonella; Carnera, A.; Albonetti, C.; Vantaggio, Salvatore; Grossner, U.
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time
2016-01-01 Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; Alfieri, Giovanni; Carnera, Alberto; Centurioni, Emanuele; Elmi, Ivan; Grossner, Ulrike
Sol-gel growth and characterization of In2O3 thin films
2018-01-01 Palomares-Sanchez, Salvador A.; Watts, Bernard E.; Klimm, Detlef; Baraldi, Andrea; Parisini, Antonella; Vantaggio, Salvatore; Fornari, Roberto
Si and Sn doping of ε-Ga2O3 layers
2019-01-01 Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R.
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism
2020-01-01 Bosio, Alessio; Borelli, Carmine; Parisini, Antonella; Pavesi, Maura; Vantaggio, Salvatore; Fornari, Roberto
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time
2020-01-01 Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Gorni, Marco; Canino, Mariaconcetta; Pizzochero, Giulio; Camarda, Massimo; Woerle, Judith; Grossner, Ulrike
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect
2020-01-01 Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Canino, Mariaconcetta; Sanmartin, Michele; Alfieri, Giovanni
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device
2021-01-01 Burganova, Regina; Parisini, Antonella; Vantaggio, Salvatore; Sajapin, Roman; Berzina, Tatiana
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion
2021-01-01 Bosio, Alessio; Parisini, Antonella; Lamperti, Alessio; Borelli, Carmine; Fornasini, Laura; Matteobosi, ; Cora, Ildikò; Fogarassy, Zsolt; Pécz, Béla; Zolnai, Zsolt; Németh, Attila; Vantaggio, Salvatore; Fornari, Roberto
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers
2022-01-01 Parisini, A.; Bosio, A.; von Bardeleben, H. J.; Jimenez, J.; Dadgostar, S.; Pavesi, M.; Baraldi, A.; Vantaggio, S.; Fornari, R.
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies
2022-01-01 Nipoti, Roberta; Boldrini, Virginia; Canino, Mariaconcetta; Tamarri, Fabrizio; Vantaggio, Salvatore; Parisini, Antonella
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources | 1-gen-2005 | Begotti, M.; Ghezzi, Carlo; Longo, M.; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore | |
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices | 1-gen-2009 | Longo, Massimo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; C., Bocchi; F., Germini; L., Lazzarini | |
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices | 1-gen-2009 | Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Baldini, M.; Vantaggio, Salvatore; Gombia, E. | |
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices | 1-gen-2010 | Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Vantaggio, Salvatore; M., Baldini; E., Gombia | |
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications | 1-gen-2011 | M., Baldini; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; E., Gombia; A., Motta; A., Gasparotto | |
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects | 1-gen-2011 | E., Gombia; Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; M., Baldini; Vantaggio, Salvatore | |
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy | 1-gen-2012 | R., Jakomin; Parisini, Antonella; Tarricone, Luciano; M., Longo; B., Fraboni; Vantaggio, Salvatore | |
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts | 1-gen-2013 | Nipoti, Roberta; A., Hallén; Parisini, Antonella; F., Moscatelli; Vantaggio, Salvatore | |
Electrical characterization of a buried GaSb p-n junction controlled by native defects | 1-gen-2014 | Gorni, Marco; Parisini, Antonella; Gombia, Enos; Baldini, M; Vantaggio, Salvatore; Ghezzi, Carlo | |
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC | 1-gen-2015 | Nipoti, R.; Parisini, Antonella; Carnera, A.; Albonetti, C.; Vantaggio, Salvatore; Grossner, U. | |
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time | 1-gen-2016 | Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; Alfieri, Giovanni; Carnera, Alberto; Centurioni, Emanuele; Elmi, Ivan; Grossner, Ulrike | |
Sol-gel growth and characterization of In2O3 thin films | 1-gen-2018 | Palomares-Sanchez, Salvador A.; Watts, Bernard E.; Klimm, Detlef; Baraldi, Andrea; Parisini, Antonella; Vantaggio, Salvatore; Fornari, Roberto | |
Si and Sn doping of ε-Ga2O3 layers | 1-gen-2019 | Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R. | |
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism | 1-gen-2020 | Bosio, Alessio; Borelli, Carmine; Parisini, Antonella; Pavesi, Maura; Vantaggio, Salvatore; Fornari, Roberto | |
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time | 1-gen-2020 | Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Gorni, Marco; Canino, Mariaconcetta; Pizzochero, Giulio; Camarda, Massimo; Woerle, Judith; Grossner, Ulrike | |
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect | 1-gen-2020 | Nipoti, Roberta; Parisini, Antonella; Boldrini, Virginia; Vantaggio, Salvatore; Canino, Mariaconcetta; Sanmartin, Michele; Alfieri, Giovanni | |
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device | 1-gen-2021 | Burganova, Regina; Parisini, Antonella; Vantaggio, Salvatore; Sajapin, Roman; Berzina, Tatiana | |
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion | 1-gen-2021 | Bosio, Alessio; Parisini, Antonella; Lamperti, Alessio; Borelli, Carmine; Fornasini, Laura; Matteobosi, ; Cora, Ildikò; Fogarassy, Zsolt; Pécz, Béla; Zolnai, Zsolt; Németh, Attila; Vantaggio, Salvatore; Fornari, Roberto | |
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers | 1-gen-2022 | Parisini, A.; Bosio, A.; von Bardeleben, H. J.; Jimenez, J.; Dadgostar, S.; Pavesi, M.; Baraldi, A.; Vantaggio, S.; Fornari, R. | |
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies | 1-gen-2022 | Nipoti, Roberta; Boldrini, Virginia; Canino, Mariaconcetta; Tamarri, Fabrizio; Vantaggio, Salvatore; Parisini, Antonella |
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